FOLP® Technology

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Structure

Cross Section


C4 bonding & encapsulation

Outer view


Outer view

ROADMAP


ROADMAP1 : FOLP®
ROADMAP2 : FOLP®

FOLP® FEATURES

Short cycle time :
Horizontal specialization process
*Wafer Bumping /OUME-ELECTRONICS
*Substrate(RDL) Process/AOI-ELECTRONICS ASAHIMACHI PLANT
*Assembly +TEST/T&R Process/AOI-ELECTRONICS TAKAMATSU PLANT


Aoi Group one stop solution!

High Efficiency :
AOI use the Low Dk/Df substrate materials for RF 5G devices.

High Yield :
KGD +KG Substrate Combination

High Reliability :
-Modified epoxy resin
-Solder materials of various composition attach

Low Cost :
-No use PI system
-In a batch-molding method without Cu-pillar capillary underfill
-Adopting the mechanical de-bonding system